TITLE

Improved Interconnect Properties For Nano-Twinned Copper: Microstructure And Stability

AUTHOR(S)
Xu, Di; Chen, Hsin-Ping; Tu, K. N.
PUB. DATE
November 2010
SOURCE
AIP Conference Proceedings;11/27/2010, Vol. 1300 Issue 1, p23
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The presence of a large amount of nano-scale twin boundaries in ultra-fine grained copper has been shown to greatly improve the mechanical strength and yet to maintain a, high ductility and good electrical conductivity. Nanotwinned copper thus is promising in applications as interconnect materials. While the microstructure of nanotwinned copper is of importance to better understand the nucleation and formation mechanism of twin boundaries, the stability of twin boundaries are of equivalent critical concern since they are stacking faults in copper grains. The effect of Cu nanotwin boundaries on grain growth was observed by various characterization techniques. We found that Cu with many twin boundaries underwent weak grain growth and less abnormal grain growth compared to Cu with few twin boundaries. Stability of {111} and {112} twin boundaries have been studied respectively under thermal aging and current stressing. The driving force of the twin boundary motion has been investigated to help understand microstructure evolution in copper interconnects.
ACCESSION #
55616326

 

Related Articles

  • Direct evidence of electromigration failure mechanism in dual-damascene Cu interconnect tree structures. Vairagar, A. V.; Mhaisalkar, S. G.; Meyer, M. A.; Zschech, E.; Krishnamoorthy, Ahila; Tu, K. N.; Gusak, A. M. // Applied Physics Letters;8/22/2005, Vol. 87 Issue 8, p081909 

    In situ secondary electron microscope (SEM) characterizations were carried out to study electromigration failure mechanism in dual-damascene Cu interconnect tree structures, which are important for reliability assessment as well as design optimizations of on-chip interconnects. Direct evidence...

  • Effects of microvoids on the linewidth dependence of electromigration failure of dual-damascene copper interconnects. Chang, C. W.; Thompson, C. V.; Gan, C. L.; Pey, K. L.; Choi, W. K.; Lim, Y. K. // Applied Physics Letters;5/7/2007, Vol. 90 Issue 19, p193505 

    The electromigration lifetime of dual-damascene Cu interconnects was found to significantly decrease with increasing linewidth, for linewidths ranging between 0.2 and 2.25 μm. Voids were also found to preexist in these lines. When void nucleation is required for failure, the electromigration...

  • Reservoir effect and the role of low current density regions on electromigration lifetimes in copper interconnects. Gan, Z. H.; Shao, W.; Mhaisalkar, S. G.; Chen, Z.; Hongyu Li; Tu, K. N.; Gusak, A. M. // Journal of Materials Research;Sep2006, Vol. 21 Issue 9, p2241 

    Electromigration (EM) in copper dual-damascene interconnects with extensions(also described as overhang regions or reservoirs) in the upper metal (M2) were investigated. It was found that as the extension length increases from 0 to 60 nm, the median-time-to-failure increased from 50 to 140 h,...

  • An investigation of electromigration induced void nucleation time statistics in short copper interconnects. Dwyer, V. M. // Journal of Applied Physics;Jun2010, Vol. 107 Issue 10, p103718-1 

    The stress evolution model (SEM) of Korhonenet al., is used to calculate the void nucleation time in a large number of short interconnects (lengths up to 50 μm). Finite element calculations show that the effect of the nonlinearity in the SEM model is small, and that a mesh size of the order...

  • Impact of Isothermal Aging on Long-Term Reliability of Fine-Pitch Ball Grid Array Packages with Sn-Ag-Cu Solder Interconnects: Surface Finish Effects. Lee, Tae-Kyu; Ma, Hongtao; Liu, Kuo-Chuan; Xue, Jie // Journal of Electronic Materials;Dec2010, Vol. 39 Issue 12, p2564 

    The interaction between isothermal aging and the long-term reliability of fine-pitch ball grid array (BGA) packages with Sn-3.0Ag-0.5Cu (wt.%) solder ball interconnects was investigated. In this study, 0.4-mm fine-pitch packages with 300- μm-diameter Sn-Ag-Cu solder balls were used. Two...

  • Effect Of Impurity On Cu Electromigration. Hu, C.-K.; Angyal, M.; Baker, B. C.; Bonilla, G.; Cabral, C.; Canaperi, D. F.; Choi, S.; Clevenger, L.; Edelstein, D.; Gignac, L.; Huang, E.; Kelly, J.; Kim, B. Y.; Kyei-Fordjour, V.; Manikonda, S. L.; Maniscalco, J.; Mittal, S.; Nogami, T.; Parks, C.; Rosenberg, R. // AIP Conference Proceedings;11/27/2010, Vol. 1300 Issue 1, p57 

    The impact of the existence of Cu grain boundaries on the degradation of Cu interconnect lifetime at the 45 nm technology node and beyond has suggested that improved electromigra-tion in Cu grain boundaries has become increasingly important. In this paper, solute effects of non-metallic (C, Cl,...

  • Resistivity reduction of Cu Interconnects. Ito, Kazuhiro; Tsukimoto, Susumu; Moriyama, Miki; Murakami, Masanori // AIP Conference Proceedings;10/31/2007, Vol. 945 Issue 1, p1 

    Although Cu was found to be attractive as interconnect materials for ultra-large scale intergrated (ULSI) Si devices, the grain boundary scattering primarily increases the resistivity of the Cu interconnects and resistivity increase due to the barrier layers becomes significantly large upon...

  • Behaviour of Copper In Annealed Cu/Sio2/Si Systems For On-Chip Interconnections. Htwe, Thant Zin; Latt, Khin Maung // AIP Conference Proceedings;1/14/2010, Vol. 1202 Issue 1, p225 

    The electrical and structural properties of thin copper films attract increasing attention nowadays because of the use for on-chip interconnections. The main advantages of copper are the excellent conductivity and the relatively high stability against electro migration damaging. Interdiffusion...

  • Conical Dark-Field Analysis For Small Grain Characterization In Narrow Cu Interconnect Structures: Potential And Challenges. Hübner, René; Engelmann, Hans-Jürgen; Zschech, Ehrenfried // AIP Conference Proceedings;11/27/2010, Vol. 1300 Issue 1, p39 

    Conical dark-field (CDF) analysis in the transmission electron microscope is introduced as a suitable method for characterizing small Cu grains in advanced interconnect structures. With a proven spatial resolution in the <5 nm range, the CDF technique is not only applied for monitoring the...

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics