A mechanism for the multiple atomic configurations of inversion domain boundaries in GaN layers grown on Si(111)

Sanchez, A. M.; Nouet, G.; Ruterana, P.; Pacheco, F. J.; Molina, S. I.; Garcia, R.
November 2001
Applied Physics Letters;11/26/2001, Vol. 79 Issue 22, p3588
Academic Journal
Atomic structure investigation has been carried out on inversion domain boundaries in GaN layer grown on Si(111) by molecular-beam epitaxy. The comparison of the stacking sequences between simulated and experimental high resolution electron microscopy images shows the existence of two different atomic configurations for the inversion domain boundaries: the Holt model coexists with the V model inside the same layers. A mechanism allowing the switch from one model to the other by the interaction with the I1 stacking fault is proposed. © 2001 American Institute of Physics.


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