Dry thermal oxidation of a graded SiGe layer

Lim, Y. S.; Jeong, J. S.; Lee, J. Y.; Kim, H. S.; Shon, H. K.; Kim, H. K.; Moon, D. W.
November 2001
Applied Physics Letters;11/26/2001, Vol. 79 Issue 22, p3606
Academic Journal
A method for the dry thermal oxidation of a strained SiGe layer is proposed. By oxidation of a graded Si[sub 1-x]Ge[sub x] layer, the effect of Ge pileup was significantly reduced and the undesirable strain relaxation by defect formation is prohibited. After oxidation, the oxidized SiGe layer was homogenized by postannealing process, and thereby a SiO[sub 2]/SiGe interface with good structural properties was obtained. During postannealing, the homogenization was significantly enhanced by strain-induced diffusion, and it was clearly proved by the uphill diffusion. This result can propose an alternative oxidation method of strained SiGe/Si heterostructures. © 2001 American Institute of Physics.


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