TITLE

Terahertz gain in a SiGe/Si quantum staircase utilizing the heavy-hole inverted effective mass

AUTHOR(S)
Soref, Richard A.; Sun, Gregory
PUB. DATE
November 2001
SOURCE
Applied Physics Letters;11/26/2001, Vol. 79 Issue 22, p3639
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Modeling and design studies show that a strain-balanced Si[sub 1-x]Ge[sub x]/Si superlattice on Si[sub 1-y]Ge[sub y]-buffered Si can be engineered to give an inverted effective mass HH2 subband adjacent to HH1, thereby enabling a 77 K edge-emitting electrically pumped p–i–p quantum staircase laser for THz emission at energies below the 37 meV Ge–Ge optical phonon energy. Analysis of hole-phonon scattering, lifetimes, matrix elements, and hole populations indicates that a gain of 450 cm[sup -1] will be feasible at f=7.3 THz during 1.7 kA/cm[sup 2] current injection. © 2001 American Institute of Physics.
ACCESSION #
5559039

 

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