Field-emission characteristics and large current density of heavily Si-doped AlN and Al[sub x]Ga[sub 1-x]N (0.38≤x<1)

Kasu, Makoto; Kobayashi, Naoki
November 2001
Applied Physics Letters;11/26/2001, Vol. 79 Issue 22, p3642
Academic Journal
From a linear relation between the applied bias and the anode–sample distance, the electric field necessary for field emission (FE) can be obtained reproducibly. For heavily Si-doped AlN and Al[sub x]Ga[sub 1-x]N (0.38≤x<1), the band gap (Al-mole fraction, x), Si-dopant density (N[sub Si]), and thickness dependences of the field emission are investigated. After optimizing the sample structure, we obtained a FE current density of 0.22 A/cm2 with a 0.3-mm-diameter rod anode from 0.8-μm-thick Si-doped (N[sub Si]:1×10[sup 21] cm[sup -3]) AlN. © 2001 American Institute of Physics.


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