TITLE

Why are sputter deposited Nd[sub 1+x]Ba[sub 2-x]Cu[sub 3]O[sub 7-δ] thin films flatter than NdBa[sub 2]Cu[sub 3]O[sub 7-δ] films?

AUTHOR(S)
Bals, S.; Van Tendeloo, G.; Salluzzo, M.; Maggio-Aprile, I.
PUB. DATE
November 2001
SOURCE
Applied Physics Letters;11/26/2001, Vol. 79 Issue 22, p3660
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
High-resolution electron microscopy and scanning tunneling microscopy have been used to compare the microstructure of NdBa[sub 2]Cu[sub 3]O[sub 7-δ] and Nd[sub 1+x]Ba[sub 2-x]Cu[sub 3]O[sub 7-δ] thin films. Both films contain comparable amounts of Nd[sub 2]CuO[sub 4] inclusions. Antiphase boundaries are induced by unit cell high steps at the substrate or by a different interface stacking. In Nd[sub 1+x]Ba[sub 2-x]Cu[sub 3]O[sub 7-δ] the antiphase boundaries tend to annihilate by the insertion of extra Nd layers. Stacking faults, which can be characterized as local Nd[sub 2]Ba[sub 2]Cu[sub 4]O[sub 9] inclusions, also absorb the excess Nd. A correlation is made between the excess Nd and the absence of growth spirals at the surface of the Nd-rich films. © 2001 American Institute of Physics.
ACCESSION #
5559031

 

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