Ferroelectric SrBi[sub 4]Ti[sub 4]O[sub 15] thin films with high polarization grown on an IrO[sub 2] layer

Sohn, D. S.; Xianyu, W. X.; Lee, W. I.; Lee, I.; Chung, I.
November 2001
Applied Physics Letters;11/26/2001, Vol. 79 Issue 22, p3672
Academic Journal
Ferroelectric strontium bismuth titanate (SrBi[sub 4]Ti[sub 4]O[sub 15]) thin films with a high remanent polarization were produced by a chemical solution deposition method. Pt and IrO[sub 2] layers were used as substrates. It was found that ferroelectric SrBi[sub 4]Ti[sub 4]O[sub 15] films can be successfully fabricated on IrO[sub 2]: They demonstrate a saturated hysteresis loop at 5 V with remanent polarization (P[sub r]) of 19 μC/cm[sup 2] and coercive field (P[sub s]) of 116 kV/cm. SrBi[sub 4]Ti[sub 4]O[sub 15] films grown on IrO[sub 2] show larger and denser grains and controlled surface morphology. The grains are random oriented, while those of films on Pt are mainly c-axis oriented. It is concluded that the high remanent polarization of the films grown on IrO[sub 2] originates from the relatively high concentration of a- and b-axis orientations. © 2001 American Institute of Physics.


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