TITLE

Low-threshold-current 1.32-μm GaInNAs/GaAs single-quantum-well lasers grown by molecular-beam epitaxy

AUTHOR(S)
Li, Wei; Jouhti, Tomi; Peng, Chang Si; Konttinen, Janne; Laukkanen, Pekka; Pavelescu, Emil-Mihai; Dumitrescu, Mihail; Pessa, Markus
PUB. DATE
November 2001
SOURCE
Applied Physics Letters;11/19/2001, Vol. 79 Issue 21, p3386
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Using solid-source molecular-beam epitaxy with a rf-plasma source, we have grown GaInNAs/GaAs single-quantum-well lasers operating at 1.32 μm. For a broad-area oxide stripe, uncoated Fabry–Perot laser with a cavity length of 1600 μm, the threshold current density is 546 A/cm[sup 2] at room temperature. The internal quantum efficiency for these lasers is 80%, while the materials losses are 7.0 cm[sup -1]. A characteristic temperature of 104 K was measured in the temperature range from 20 to 80 °C. Optical output up to 40 mW per facet under continuous-wave operation was achieved for these uncoated lasers at room temperature. © 2001 American Institute of Physics.
ACCESSION #
5549580

 

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