Phonon modes of GaN[sub y]P[sub 1-y] (0.006≤y≤0.0285) measured by midinfrared spectroscopic ellipsometry

Leibiger, G.; Gottschalch, V.; Kasic, A.; Schubert, M.
November 2001
Applied Physics Letters;11/19/2001, Vol. 79 Issue 21, p3407
Academic Journal
Midinfrared spectroscopic ellipsometry reveals the two-phonon mode behavior of GaN[sub y]P[sub 1-y] for nitrogen compositions 0.006≤y≤0.0285. The single layers (∼350 nm) studied were grown by metalorganic vapor-phase epitaxy on GaP substrates with orientations (001), and (001) with 5° off toward [110]. Line-shape analysis of the midinfrared response allows determination of the transverse- and longitudinal-optical phonon frequencies of the GaP- and GaN-like phonon modes. The polar strength of the GaN lattice resonance increases linearly with y, which can be used to monitor the nitrogen content of GaN[sub y]P[sub 1-y]. © 2001 American Institute of Physics.


Related Articles

  • Nitrogen dependence of the GaAsN interband critical points E[sub 1] and E[sub 1]+Δ[sub 1] determined by spectroscopic ellipsometry. Leibiger, G.; Gottschalch, V.; Rheinla¨nder, B.; Sik, J.; Schubert, M. // Applied Physics Letters;9/11/2000, Vol. 77 Issue 11 

    The effects of the nitrogen concentrations on the E[sub 1] and E[sub 1]+Δ[sub 1] transitions of tensile-strained GaAs[sub 1-y]N[sub y] (0.1%≤y≤3.7%) grown pseudomorphically to GaAs by metalorganic vapor-phase epitaxy are studied by spectroscopic ellipsometry. Adachi's...

  • Solidification of Ga-Mg-Zn in a gas-filled drop tube: Experiments and modeling. Fransaer, Jan; Wagner, Andrew V. // Journal of Applied Physics;2/15/2000, Vol. 87 Issue 4, p1801 

    Investigates the nucleation behavior of polytetrahedral crystals further by studying the gallium-magnesium-zinc system in a gas-filled drop tube. Methodology used; Heat and mass transport in and out around a falling drop; Fluid drag and temperature field of the drop.

  • Terahertz emission of population-inverted hot-holes in single-crystalline silicon. Bru¨ndermann, E.; Haller, E. E.; Muravjov, A. V. // Applied Physics Letters;8/10/1998, Vol. 73 Issue 6, p723 

    We report THz emission of hot-holes in p-type silicon doped with a boron acceptor concentration of N[sub A]=1.5×10[sup 15] cm[sup -3]. We apply crossed electric (E) and magnetic (B) fields to the crystal cooled to liquid helium temperature. Optical gain is found for field ratios E/B in the...

  • Electrical and structural properties of Re/GaAs Schottky diodes. Lin, Chia-Chien; Wu, Meng-Chyi // Journal of Applied Physics;4/1/1999, Vol. 85 Issue 7, p3893 

    Investigates the combination of rhenium/gallium arsenide (Re/GaAs) after heat treatment in both material and device aspects. Analysis of Rutherfold backscattering, x-ray diffractometer and transmission electron microscope; Sheet resistance exhibited; Interdiffusion between Re film and GaAs...

  • Raman scattering in Ga0.47In0.53As/InP superlattices grown by metalorganic vapor phase epitaxy. Davey, S. T.; Spurdens, P. C.; Wakefield, B.; Nelson, A. W. // Applied Physics Letters;9/7/1987, Vol. 51 Issue 10, p758 

    Raman scattering in two Ga0.47In0.53As/InP superlattices is reported. Scattering by folded longitudinal acoustic phonons has been observed and interpreted using the elastic continuum theory. The data yield superlattice periods of 18.0 and 12.1 nm. The optical phonon energies are observed to be...

  • Dependence of Scattering of Quasi-Two-Dimensional Electrons by Acoustic Phonons on the Parameters of a GaAs/Al[sub x]Ga[sub 1 — ][sub x]As Superlattice. Borisenko, S. I. // Semiconductors;Oct2002, Vol. 36 Issue 10, p1159 

    The time of relaxation of quasi-two-dimensional electrons in a GaAs/Al[sub x]Ga[sub 1-x]As superlattice in the case of scattering by acoustic phonons was calculated numerically in relation to the quantum-well width and the width and height of the potential barrier. The probability of scattering...

  • Raman scattering in GaSb-AlSb strained layer superlattices. Jusserand, B.; Voisin, P.; Voos, M.; Chang, L. L.; Mendez, E. E.; Esaki, L. // Applied Physics Letters;4/1/1985, Vol. 46 Issue 7, p678 

    We observe that the energy of the GaSb longitudinal optical phonons in GaSb-AlSb superlattices is about 2 cm-1 lower than in bulk GaSb. We show that this effect is fully explained by the consideration of the misfit strains which are known to exist in these superlattices. This shift of the Raman...

  • Indirect transitions, free and impurity-bound excitons in gallium phosphide: A revisit with... Alawadhi, H.; Vogelgesang, R.; Ramdas, A. K.; Chin, T. P.; Woodall, J. M. // Journal of Applied Physics;11/1/1997, Vol. 82 Issue 9, p4331 

    Reports on the measurement of the momentum conserving indirect excitonic transitions for GaP in piezo-modulated transmission. Appearance of 120 K signatures for absorption and emission of LA(X) and TA(X) phonons; Emission lines for excitons bound to S and N as well as their phonon sidebands;...

  • Electron cooling by arrays of submicron tunnel junctions. Leoni, R.; Arena, G. // Journal of Applied Physics;4/1/1999, Vol. 85 Issue 7, p3877 

    Presents information on a study which examined the decoupling mechanism between electrons and phonons. Structures of superconductor electrodes; Enhancement of the cooling effect; Experimental results.


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics