Improvement of CoSi[sub 2] thermal stability by cavity formation

Alberti, A.; La Via, F.; Ravesi, S.; Rimini, E.
November 2001
Applied Physics Letters;11/19/2001, Vol. 79 Issue 21, p3419
Academic Journal
We propose a method to improve the thermal stability of thin CoSi[sub 2] layers on polycrystalline silicon substrates. Nitrogen atoms have been implanted at 55 keV to a dose of 5×10[sup 15]/cm[sup 2] through a 70 nm silicide layer in order to locate the implanted peak near the silicide/silicon interface. The large band of cavities created at the interface has extended the thermal stability window by 125 °C with respect to the standard process. The improvement has been related to the silicide grain-boundary pinning due to the increase of the interface free energy contribution. © 2001 American Institute of Physics.


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