TITLE

Improvement of CoSi[sub 2] thermal stability by cavity formation

AUTHOR(S)
Alberti, A.; La Via, F.; Ravesi, S.; Rimini, E.
PUB. DATE
November 2001
SOURCE
Applied Physics Letters;11/19/2001, Vol. 79 Issue 21, p3419
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We propose a method to improve the thermal stability of thin CoSi[sub 2] layers on polycrystalline silicon substrates. Nitrogen atoms have been implanted at 55 keV to a dose of 5×10[sup 15]/cm[sup 2] through a 70 nm silicide layer in order to locate the implanted peak near the silicide/silicon interface. The large band of cavities created at the interface has extended the thermal stability window by 125 °C with respect to the standard process. The improvement has been related to the silicide grain-boundary pinning due to the increase of the interface free energy contribution. © 2001 American Institute of Physics.
ACCESSION #
5549569

 

Related Articles

  • Enhancement of thermal stability of NiSi films on (100)Si and (111)Si by Pt addition. Mangelinck, D.; Dai, J.Y.; Pan, J.S.; Lahiri, S.K. // Applied Physics Letters;9/20/1999, Vol. 75 Issue 12, p1736 

    Studies the effect of a small amount of platinum on thermal stability of the disilicide NiSi films on silicon substrates. Effect on the disilicide nucleation temperature; Stability of the films in high temperature; Explanation of the increase in thermal stability in terms of the nucleation concept.

  • Role of the substrate strain in the sheet resistance stability of NiSi deposited on Si(100). Maillard-Schaller, Eliane; Boyanov, B.I. // Journal of Applied Physics;4/1/1999, Vol. 85 Issue 7, p3614 

    Studies the influence of silicon substrate strain on the thermal stability of the nickel monosilicide (NiSi). Identification of a cross-hatch pattern by atomic force microscopy; Observation on the surface morphology during annealing; Results of the study.

  • Thermodynamic and kinetic study of solid state reactions in the Cu-Si system. Chromik, R.R.; Neils, W.K. // Journal of Applied Physics;10/15/1999, Vol. 86 Issue 8, p4273 

    Examines the effect of replacing crystalline silicon (Si) with amorphous Si on the solid state reactions. Thermodynamics and kinetics of the formation of the three low temperature Cu silicides; Results of the structural analysis of Cu and amorphous Si multilayered composites after high...

  • Impact of Hf content on negative bias temperature instabilities in HfSiON-based gate stacks. Houssa, M.; Aoulaiche, M.; Van Elshocht, S.; De Gendt, S.; Groeseneken, G.; Heyns, M. M. // Applied Physics Letters;4/25/2005, Vol. 86 Issue 17, p173509 

    The shift of the threshold voltage, Vth, of p-channel metal-oxide-semiconductor field-effect transistors with HfSiON gate stacks, subjected to negative bias temperature stress, is investigated. It is found that Vth shift increases with time, like a power law, with an exponent that decreases with...

  • Thermal Properties of Si Mechanically Alloyed with FeSi2 and CrSi2. Galkin, Konstantin; Usenko, Andrey; Voronin, Andrey; Moskovskikh, Dmitriy; Korotitskiy, Andrey; Gorshenkov, Mikhail; Galkin, Nikolay; Khovaylo, Vladimir // Applied Mechanics & Materials;2015, Vol. 799-800, p207 

    Thermal properties of Si mechanically alloyed with FeSi2 and CrSi2 were characterized for the samples with different volume fraction of the disilicides. An anomalously low thermal conductivity observed in the FeSi2-doped samples was ascribed to an enhanced porosity of the samples which triggered...

  • The Heat Resistance of Diffusion Chromosilicide Coatings Applied on a Carbon Stells. Pogrebova, I. S.; Iantsevitch, C. V. // Naukovi visti NTUU - KPI;2011, Vol. 2011 Issue 2, p152 

    The paper studies heat resistance and the mechanism of high-temperature oxidation of chromosilicide diffusion coatings applied on a surface of carbon steels by a gas method. We define the factors of influence on the process of high-temperature steels oxidation with the obtained coatings. The...

  • Two-step Al/Ti metallization to PtSi/Si structures. Eizenberg, M.; Tu, K. N.; Palmstro\m, C. J.; Mayer, J. W. // Applied Physics Letters;1984, Vol. 45 Issue 8, p905 

    A two-step Al metallization procedure to prevent Al degradation of PtSi/Si Schottky barrier characteristics has been evaluated using Al3Ti as the kinetic barrier to the consumption of Ti. In the first step a thin Al layer is deposited on a Ti layer on PtSi/Si and is heated to the standard...

  • Ab Initio Calculated Thermodynamic Properties of MoSiB Phase and NbSiB Phase. Kim, Sungtae; Park, J. // JOM: The Journal of The Minerals, Metals & Materials Society (TM;Nov2013, Vol. 65 Issue 11, p1482 

    Due to their attractive high-temperature properties, multiphase Mo-Si-B alloys in the Mo-rich Mo-Si-B ternary system have been identified for high-temperature applications. The ternary intermetallic T (MoSiB) phase is a central feature of the phase equilibria within this ternary system....

  • Thermal stability of TiO2, ZrO2, or HfO2 on Si(100) by photoelectron emission microscopy. Zeman, M. C.; Fulton, C. C.; Lucovsky, G.; Nemanich, R. J.; Yang, W.-C. // Journal of Applied Physics;1/15/2006, Vol. 99 Issue 2, p023519 

    The thermal stability of thin films (3 nm) of transition-metal (TM) oxides (TiO2, ZrO2, and HfO2) grown on ultrathin (∼0.5 nm) SiO2 buffer layers on Si(100) surfaces was investigated with ultraviolet photoelectron emission microscopy (UV-PEEM). The decomposition of the TM oxides was...

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics