Extending the epitaxial thickness limit in low-substrate-temperature- grown GaAs

Apostolopoulos, G.; Boukos, N.; Travlos, A.; Herfort, J.; Ploog, K. H.
November 2001
Applied Physics Letters;11/19/2001, Vol. 79 Issue 21, p3422
Academic Journal
A method for extending the epitaxial thickness limit in low-temperature-grown GaAs (LT-GaAs) is presented. It is shown that the use of vicinal GaAs(001) substrates with a high misorientation angle reduces the surface roughness of LT-GaAs and inhibits the nucleation of defects which cause the breakdown of perfect epitaxial growth. Kinetic Monte Carlo simulations are used to describe the influence of the vicinal substrate on the growth mode and to estimate the appropriate misorientation angle. © 2001 American Institute of Physics.


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