TITLE

In as a surfactant for the growth of GaN (0001) by plasma-assisted molecular-beam epitaxy

AUTHOR(S)
Kruse, C.; Einfeldt, S.; Bo¨ttcher, T.; Hommel, D.
PUB. DATE
November 2001
SOURCE
Applied Physics Letters;11/19/2001, Vol. 79 Issue 21, p3425
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The influence of indium on the surface morphology of GaN (0001) grown by plasma-assisted molecular-beam epitaxy (MBE) has been investigated. The rough and grain-like surface under nitrogen-rich growth conditions becomes smoother and similar to surfaces grown under gallium-rich conditions when a sufficiently high indium flux is used. However, the use of indium instead of gallium-rich conditions prevents the formation of gallium droplets on the surface which are associated with voids at their edges. Since indium is not incorporated into GaN for growth temperatures above 700 °C, it can be used as a surfactant in MBE growth of GaN. © 2001 American Institute of Physics.
ACCESSION #
5549567

 

Related Articles

  • Arsenic surfactant effects and arsenic mediated molecular beam epitaxial growth for cubic GaN. Okumura, H.; Hamaguchi, H.; Feuillet, G.; Ishida, Y.; Yoshida, S. // Applied Physics Letters;6/8/1998, Vol. 72 Issue 23, p3056 

    Small amounts of As residual pressure were found to affect the structure of cubic GaN growing surfaces in molecular beam epitaxy growth, i.e., modification of surface reconstruction structures, stabilization of reconstructed flat surfaces at high substrate temperatures, and preferential growth...

  • Self-stopping selective-oxidation process of AlAs. Yoshikawa, Takashi; Saito, Hideaki; Kosaka, Hideo; Sugimoto, Yoshimasa; Kasahara, Kenichi // Applied Physics Letters;5/4/1998, Vol. 72 Issue 18 

    Self-stopping, selective oxidation of AlAs was demonstrated. Lateral oxidation was stopped where the thickness of AlAs was decreased from 30 to 15 nm because of the large stress arising from the layer boundary of the oxidized AlAs and the surrounding GaAs. The thickness could be varied without...

  • Surfactant-mediated growth of Si[sub 1-x] Sn[sub x] layers by molecular-beam epitaxy. Fyhn, M.F.; Lundsgaard Hansen, J.; Chevallier, J.; Nylandsted Larsen, A. // Applied Physics A: Materials Science & Processing;1999, Vol. 68 Issue 2, p259 

    Abstract. Submonolayers of Bi were used as surfactant in the growth of Si[sub 1 - x]Sn[sub x] (0.01 less than or equal to x less than or equal to 0.04) layers on Si(001) and relaxed Si-Ge substrates. The Si[sub 1 - x]Sn[sub x] layers were investigated using Rutherford backscattering...

  • Improved quality GaN grown by molecular beam epitaxy using In as a surfactant. Widmann, F.; Daudin, B.; Feuillet, G.; Pelekanos, N.; Rouvie`re, J. L. // Applied Physics Letters;11/2/1998, Vol. 73 Issue 18 

    The surfactant effect of In during the growth of GaN by molecular beam epitaxy has been investigated. It has been found that the presence of In modifies the diffusion kinetics in the growing GaN surface, leading to the observation of persistent reflection high energy electron diffraction...

  • Ge growth on Si using atomic hydrogen as a surfactant. Sakai, Akira; Tatsumi, Toru // Applied Physics Letters;1/3/1994, Vol. 64 Issue 1, p52 

    Examines the growth of germanium (Ge) thin films on silicon substrates using atomic hydrogen (H) as a surfactant. Suppression of Ge island formation; Alteration of film growth in molecular beam epitaxy; Use of reflection high-energy electron diffraction to monitor surface structure growth;...

  • The influence of a Pb surfactant on the magnetism of dilute Si1-xMnx films. Kahwaji, S.; Bowman, W.; Robertson, M. D.; Monchesky, T. L. // Journal of Applied Physics;Feb2013, Vol. 113 Issue 6, p063910 

    We investigated the effect of Pb surfactant on the growth mode and magnetism of dilute Si1-xMnx thin films grown by molecular beam epitaxy. We find that the nanocolumns that form in Pb-free samples are paramagnetic with a small saturation moment that drops with increasing Mn concentration. On...

  • Thin multiplication region InAlAs homojunction avalanche photodiodes. Lenox, C.; Yuan, P.; Nie, H.; Baklenov, O.; Hansing, C.; Campbell, J. C.; Holmes, A. L.; Streetman, B. G. // Applied Physics Letters;8/10/1998, Vol. 73 Issue 6, p783 

    Low excess noise in avalanche photodetectors (APDs) is desired for improved sensitivity and high-frequency performance. Gain and noise characteristics are measured for InAlAs p-i-n homojunction APDs that were grown with varying i-region widths on InP by molecular beam epitaxy. The effective...

  • Stacking of metamorphic InAlAs/InGaAs heterostructures on GaAs substrate. Cordier, Y.; Zaknoune, M.; Trassaert, S.; Chauveau, J. M. // Journal of Applied Physics;Dec2001, Vol. 90 Issue 11, p5774 

    In this work, two lattice mismatched heterostructures called stacked metamorphic high-electron mobility transistors have been grown showing the feasibility of the metamorphic concept for the vertical integration of structures having different lattice parameters. Molecular-beam epitaxy of linear...

  • Erbium and Germanium Profiles in Si1 � xGex Layers Grown by Silicon Sublimation-Source Molecular-Beam Epitaxy in GeH4. Shengurov, V.G.; Svetlov, S.P.; Chalkov, V. Yu.; Andreev, B.A.; Krasil'nik, Z.F.; Ber, B. Ya.; Drozdov, Yu. N. // Inorganic Materials;Jan2003, Vol. 39 Issue 1, p3 

    The Ge and Er depth profiles in Si1-xGex layers grown on Si(100) substrates by Si sublimation-source molecular-beam epitaxy in GeH4 were studied by secondary ion mass spec trometry. The results demonstrate that Ge facilitates Er incorporation into the growing Si-Ge layer. The Er dopant profile...

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics