High-quality Ge films on Si substrates using Sb surfactant-mediated graded SiGe buffers

Liu, J. L.; Tong, S.; Luo, Y. H.; Wan, J.; Wang, K. L.
November 2001
Applied Physics Letters;11/19/2001, Vol. 79 Issue 21, p3431
Academic Journal
High-quality Ge films were grown on Si substrates by solid-source molecular beam epitaxy using SiGe graded layer and Sb surfactant-mediation technique. Transmission electron microscopy measurements show that samples grown using this method have a lower threading dislocation density than those grown by other typical methods, such as grading at high temperature (700 °C) only, grading at intermediate temperature (510 °C) only, and the use of low temperature Si buffer. A relaxed Ge film on a 4-μm-thick graded buffer was grown and shown to have a threading dislocation density of 5.4×10[sup 5] cm[sup -2] and surface roughness of 35 Å. Ge p–i–n diodes were fabricated and tested. Under a reverse bias of 1 V, the p–i–n Ge mesa photodiodes exhibit a very low dark current density of 0.15 mA/cm[sup 2]. © 2001 American Institute of Physics.


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