Characterization of high dose Fe implantation into p-GaN

Theodoropoulou, N.; Hebard, A. F.; Chu, S. N. G.; Overberg, M. E.; Abernathy, C. R.; Pearton, S. J.; Wilson, R. G.; Zavada, J. M.
November 2001
Applied Physics Letters;11/19/2001, Vol. 79 Issue 21, p3452
Academic Journal
High concentrations (3–5 at. %) of Fe were incorporated into p-GaN by direct implantation at elevated substrate temperature (350 °C). Subsequent annealing at 700 °C produced apparent ferromagnetic behavior up to ∼250 K for the 3 at. % sample. Selected area diffraction patterns did not reveal the presence of any other phases in the Fe-implanted region. The direct implantation process appears promising for examining the properties of magnetic semiconductors with application to magnetotransport and magneto-optical devices. © 2001 American Institute of Physics.


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