Planar superconductor-normal-superconductor Josephson junctions in MgB[sub 2]

Burnell, G.; Kang, D.-J.; Lee, H. N.; Moon, S. H.; Oh, B.; Blamire, M. G.
November 2001
Applied Physics Letters;11/19/2001, Vol. 79 Issue 21, p3464
Academic Journal
We report the successful creation of planar MgB[sub 2] junctions by localized ion damage in thin (100 nm) films of MgB[sub 2] on sapphire by milling a 50 nm trench with a focused-ion beam across tracks of widths between 1 and 5 μm. When the depth of the trench is between 70% and 80% of the film thickness, devices show critical currents (I[sub C]) for temperatures below 25 K. The I[sub C] of these devices is strongly modulated by applied microwave radiation and magnetic field. The product of the critical current and normal state resistance (I[sub C]R[sub N]) is remarkably high, implying a potential for very-high-frequency applications. © 2001 American Institute of Physics.


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