TITLE

Room temperature ferromagnetic properties of (Ga, Mn)N

AUTHOR(S)
Reed, M. L.; El-Masry, N. A.; Stadelmaier, H. H.; Ritums, M. K.; Reed, M. J.; Parker, C. A.; Roberts, J. C.; Bedair, S. M.
PUB. DATE
November 2001
SOURCE
Applied Physics Letters;11/19/2001, Vol. 79 Issue 21, p3473
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Dilute magnetic semiconductor GaN with a Curie temperature above room temperature has been achieved by manganese doping. By varying the growth and annealing conditions of Mn-doped GaN we have identified Curie temperatures in the range of 228–370 K. These Mn-doped GaN films have ferromagnetic behavior with hysteresis curves showing a coercivity of 100–500 Oe. Structure characterization by x-ray diffraction and transmission electron microscopy indicated that the ferromagnetic properties are not a result of secondary magnetic phases. © 2001 American Institute of Physics.
ACCESSION #
5549551

 

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