Copper wetting of a tantalum silicate surface: Implications for interconnect technology

Zhao, X.; Leavy, M.; Magtoto, N. P.; Kelber, J. A.
November 2001
Applied Physics Letters;11/19/2001, Vol. 79 Issue 21, p3479
Academic Journal
X-ray photoelectron spectroscopy data show that sputter-deposited Cu (300 K) displays conformal growth on oxidized TaSi films (TaSiO[sub 6]). The TaSiO[sub 6] films, 6 Å thick, were formed by sputter deposition of Ta onto ultrathin SiO[sub 2] substrates at 300 K, followed by annealing to 600 K in 2 Torr O[sub 2]. The photoelectron spectra of the films are characterized by a Si(2p) binding energy at 102.1 eV, indicative of silicate formation. Annealing the film to >900 K resulted in silicate decomposition and SiO[sub 2] formation. Cu(I) formation and conformal growth were not observed for the annealed films. The results are similar to those previously reported for oxidized TaSiN, and indicate that Si-modified Ta barriers should maintain Cu wettability under oxidizing conditions for Cu interconnect applications. © 2001 American Institute of Physics.


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