TITLE

Interpretation of photoluminescence spectra obtained for spark-processed Si

AUTHOR(S)
Hummel, R. E.; Shepherd, N.; Burton, D.
PUB. DATE
November 2001
SOURCE
Applied Physics Letters;11/12/2001, Vol. 79 Issue 20, p3218
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Absorption spectra obtained from spark-processed Si (sp-Si) utilizing differential reflectometry yield a series of closely spaced energy levels, as expected for amorphous materials, which reside between 1.7 and 2.8 eV. Further, a broad absorption band is observed between about 3.2 and about 6.2 eV. A HeCd laser pumps electrons from the ground state into this absorption band. The blue and green photoluminescence peaks of sp-Si are interpreted as originating from emission energy levels at 3.22 and 2.36 eV into which the electrons revert from the just mentioned absorption band by nonradiative transitions. In contrast, pumping with an argon ion laser provides only enough energy to excite the electrons from the ground state into the above mentioned, closely spaced, lower absorption bands and thus causes only a 1.9 eV (red) radiation. © 2001 American Institute of Physics.
ACCESSION #
5549525

 

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