Interpretation of photoluminescence spectra obtained for spark-processed Si

Hummel, R. E.; Shepherd, N.; Burton, D.
November 2001
Applied Physics Letters;11/12/2001, Vol. 79 Issue 20, p3218
Academic Journal
Absorption spectra obtained from spark-processed Si (sp-Si) utilizing differential reflectometry yield a series of closely spaced energy levels, as expected for amorphous materials, which reside between 1.7 and 2.8 eV. Further, a broad absorption band is observed between about 3.2 and about 6.2 eV. A HeCd laser pumps electrons from the ground state into this absorption band. The blue and green photoluminescence peaks of sp-Si are interpreted as originating from emission energy levels at 3.22 and 2.36 eV into which the electrons revert from the just mentioned absorption band by nonradiative transitions. In contrast, pumping with an argon ion laser provides only enough energy to excite the electrons from the ground state into the above mentioned, closely spaced, lower absorption bands and thus causes only a 1.9 eV (red) radiation. © 2001 American Institute of Physics.


Related Articles

  • Photoluminescence of thin amorphous-nanocrystalline silicon films. Golubev, V. G.; Medvedev, A. V.; Pevtsov, A. B.; Sel�kin, A. V.; Feoktistov, N. A. // Physics of the Solid State;Jan99, Vol. 41 Issue 1, p137 

    Photoluminescence spectra of thin hydrogenated-silicon films having mixed amorphousnanocrystalline phase composition have been studied. Fabry-Perot interference was found to affect strongly the shape of the spectra. An analysis of the spectra made with inclusion of interference corrections shows...

  • Formation of optically active centers in films of erbium-doped amorphous hydrated silicon. Mezdrogina, M. M.; Annaorazova, M. P.; Terukov, E. I.; Trapeznikova, I. N.; Nazarov, N. // Semiconductors;Oct99, Vol. 33 Issue 10, p1145 

    We have observed photoluminescence at 1.54 �m from a-Si:H films doped with erbium of various degrees of purity. It is shown that the additional introduction of oxygen activates the Er ions. The effect of silicides and defects in amorphous silicon a-Si:H films and in crystalline silicon c-Si...

  • Photoluminescence method for detecting trace levels of iron in ultrapure silicon. Broussell, I.; Karasyuk, V. A.; Thewalt, M. L. W. // Applied Physics Letters;5/14/2001, Vol. 78 Issue 20, p3070 

    A nondestructive technique is presented for the determination of trace levels of interstitial iron contamination in ultrapure silicon. This approach is based on the well-known ability of iron to undergo a reversible pairing reaction with boron near room temperature. A variety of float-zoned...

  • Band-gap narrowing in heavily doped silicon: A comparison of optical and electrical data. Wagner, Joachim; del Alamo, Jesús A. // Journal of Applied Physics;1/15/1988, Vol. 63 Issue 2, p425 

    Studies the band-gap narrowing in heavily doped silicon using photoluminescence and photoluminescence excitation spectroscopy. Optical data on the silicon; Mathematical models for gathering electrical data; Discussion on the results of the study.

  • Modeling of luminescence phase delay for nondestructive characterization of Si wafers. Guidotti, D.; Batchelder, J. S.; Finkel, A.; Gerber, P. D.; Van Vechten, J. A. // Journal of Applied Physics;9/15/1989, Vol. 66 Issue 6, p2542 

    Deals with a study which reported a nondestructive and noninvasive technique for inspecting silicon wafers at various stages of processing using the method of photoluminescence phase delay or PPD. Experimental details; General description of carrier diffusion and PL emission; Three-dimensional...

  • Demonstration of photoluminescence in nonanodized silicon. Sarathy, J.; Shih, S. // Applied Physics Letters;3/30/1992, Vol. 60 Issue 13, p1532 

    Demonstrates the photoluminescence (PL) in nonanodized silicon (Si). Formation of photoluminescent Si by nonanodization-based etching process; Influence of laser irradiation on PL degradation; Characterization of surface topography by atomic force microscopy; Effect of vacuum annealing of...

  • Photoluminescence and formation mechanism of chemically etched silicon. Shih, S.; Jung, K.H. // Applied Physics Letters;4/13/1992, Vol. 60 Issue 15, p1863 

    Examines the photoluminescence and formation of chemically etched silicon (Si) in a mixture of hydrofluoric acid, nitric acid and deionized water. Use of scanning electron microscopic technique; Comparison of etched Si surface morphology with anodization-prepared luminescent porous Si;...

  • Intensity dependence and transient dynamics of donor–acceptor pair recombination in ZnO thin films grown on (001) silicon. Guo, Bing; Qiu, Z. R.; Wong, K. S. // Applied Physics Letters;4/7/2003, Vol. 82 Issue 14, p2290 

    We report room-temperature time-integrated and time-resolved photoluminescence (PL) measurements on a nominally undoped wurtzite ZnO thin film grown on (001) silicon. A linear and sublinear excitation intensity I[sub ex] dependence of the PL intensity were observed for the 379.48-nm exciton line...

  • Photo-assisted tuning of luminescence from porous silicon. Koyama, Hideki; Koshida, Nobuyoshi // Journal of Applied Physics;11/15/1993, Vol. 74 Issue 10, p6365 

    Presents a study which proposed a method to control the wavelength of visible photoluminescence (PL) from porous silicon (PS). Discussion on the luminescent properties of PS; Experiment on the PL properties of PS; Measurement of the PL peak-wavelength.

  • Polarized Raman and photoluminescence study on silicon quantum wires. Papadimitriou, D.; Nassiopoulou, A. G. // Journal of Applied Physics;7/15/1998, Vol. 84 Issue 2, p1059 

    Presents a Raman and photoluminescence study, on silicon (Si) quantum wires fabricated on crystalline silicon (100). In-depth look at the splitting of the Raman phonon; Comparison of the Raman spectrum of silicon nanowires with the Raman spectrum of virgin crystalline silicon; Examination of...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics