TITLE

Electromigration critical length effect in Cu/oxide dual-damascene interconnects

AUTHOR(S)
Lee, Ki-Don; Ogawa, Ennis T.; Matsuhashi, Hideki; Justison, Patrick R.; Ko, Kil-Soo; Ho, Paul S.; Blaschke, Volker A.
PUB. DATE
November 2001
SOURCE
Applied Physics Letters;11/12/2001, Vol. 79 Issue 20, p3236
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Electromigration tests at temperatures between 340 and 400 °C and current densities between 1.0 and 3.0 MA/cm[sup 2] have been performed to determine the temperature dependence of the critical length effect in 0.5-μm-wide Cu/oxide dual-damascene interconnects with 0.1 μm silicon nitride (SiN[sub x]) passivation. A focused-ion-beam-induced contrast imaging technique is used to locate failure sites of critical length test structures. Statistical analysis [E. T. Ogawa et al., Appl. Phys. Lett. 78, 18 (2001)] yields a threshold-length product (jL)[sub c], of 3700 A/cm, and a temperature dependence is not observed within the temperature range 340–400 °C. © 2001 American Institute of Physics.
ACCESSION #
5549519

 

Related Articles

  • Electromigration wreaks havoc on IC design. Lloyd, Jim; Overhauser, David // EDN;03/26/98, Vol. 43 Issue 7, p145 

    Presents infomation on electromigration (EM), and how understanding this problem can prolong the life of an integrated circuit. How EM occurs; Why EM occurs; Problem associated with Joule heating; How EM can be prevented. INSET: The basics of electromigration.

  • Electromigration saturation in a simple interconnect tree. Hau-Riege[a], Stefan P.; Thompson[b], Carl V. // Journal of Applied Physics;9/1/2000, Vol. 88 Issue 5, p2382 

    Presents the results of electromigration-saturation experiments carried out on passivated 'L'-shaped interconnects which had three contacts through W-filled vias at the ends of and at the corners of the L's. Applications of currents of different magnitudes and directions in the two limbs of the...

  • Atomistic and computer modeling of metallization failure of integrated circuits by electromigration. Kirchheim, R.; Kaeber, U. // Journal of Applied Physics;7/1/1991, Vol. 70 Issue 1, p172 

    Presents a study on metallization failure of integrated circuits by electromigration. Method of the study; Results and discussion; Conclusion.

  • In situ x-ray microscopic observation of the electromigration in passivated Cu interconnects. Schneider, G.; Hambach, D.; Niemann, B.; Kaulich, B.; Susini, J.; Hoffmann, N.; Hasse, W. // Applied Physics Letters;3/26/2001, Vol. 78 Issue 13, p1936 

    X-ray imaging of electromigration in a passivated Cu interconnect was performed with 100-nm spatial resolution. A time sequence of 200 images, recorded with the European Synchrotron Radiation Facility x-ray microscope in 2.2 h at 4 keV photon energy, visualizes the mass flow of Cu at current...

  • Current-crowding-induced electromigration failure in flip chip solder joints. Yeh, Everett C. C.; Choi, W. J.; Tu, K. N.; Elenius, Peter; Balkan, Haluk // Applied Physics Letters;1/28/2002, Vol. 80 Issue 4, p580 

    In a flip chip solder joint, the cross-section of the solder bump is one to two orders of magnitude bigger than that of an interconnect wire. At the contact interface between the bump and the wire, a very large current crowding occurs and it causes a unique and fast electromigration failure in...

  • Diffuse interface model for electromigration and stress voiding. Bhate, Deepali N.; Kumar, Ashish // Journal of Applied Physics;2/15/2000, Vol. 87 Issue 4, p1712 

    Presents a study which proposed a diffuse interface or phase field model for stimulating electromigration and stress voiding. Importance of addressing electromigration in designing integrated circuits; Description of sharp and diffuse interface models; Asymptotic analysis of the model.

  • New technique and analysis of accelerated electromigration life testing in multilevel metallizations. Muray, L. P.; Rathbun, L. C.; Wolf, E. D. // Applied Physics Letters;10/10/1988, Vol. 53 Issue 15, p1414 

    Electromigration failure of a series-parallel configuration of aluminum interconnects overlayed on tungsten contacts was measured using a novel multiple lognormal analysis. The analysis examined early failure mechanisms and allowed rapid determination of electromigration parameters on a...

  • Statistical study of electromigration early failures in dual-damascene Cu/oxide interconnects. Lee, Ki-Don; Ogawa, Ennis T.; Matsuhashi, Hideki; Ho, Paul S. // AIP Conference Proceedings;2002, Vol. 612 Issue 1, p61 

    Electromigration (EM) tests have been performed to determine early failure statistics in submicron dual-damascene Cu/oxide interconnects. Monte Carlo simulation, based on the “weakest-link” model, was developed to characterize and determine the failure modes from the cumulative...

  • A high reliability copper dual-damascene interconnection with direct-contact via structure. Ueno, Kazuyoshi; Suzuki, Mieko; Matsumoto, Akira; Motoyama, Koichi; Oda, Noriaki; Miyamoto, Hidenobu; Saito, Shuichi // AIP Conference Proceedings;2002, Vol. 612 Issue 1, p49 

    A new via technology for improving electromigration (EM) reliability of copper (Cu) dual-damascene (DD) interconnection has been developed. Early failure mode of a conventional Cu DD structure is found as void formation at the via-bottom interface, where flux divergence of Cu ions is large due...

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics