The nature of arsenic incorporation in GaN

Bell, A.; Ponce, F. A.; Novikov, S. V.; Foxon, C. T.; Harrison, I.
November 2001
Applied Physics Letters;11/12/2001, Vol. 79 Issue 20, p3239
Academic Journal
A systematic study of the nature of arsenic incorporation in GaN grown by molecular-beam epitaxy is presented. The samples were grown with concentrations of arsenic ranging from 3.4×10[sup 17] to 4.2×10[sup 18] cm[sup -3]. Secondary ion mass spectroscopy data show that increasing the As concentration has the effect of increasing the amount of As in the nitrogen site as compared to As in the gallium site. This trend is used to explain the reduction in carrier mobility with increasing As concentration. © 2001 American Institute of Physics.


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