Atomistic evolution of Si[sub 1–x–y]Ge[sub x]C[sub y] thin films on Si(001) surfaces

Sakai, Akira; Torige, Yuji; Okada, Masahisa; Ikeda, Hiroya; Yasuda, Yukio; Zaima, Shigeaki
November 2001
Applied Physics Letters;11/12/2001, Vol. 79 Issue 20, p3242
Academic Journal
The initial growth process of Si[sub 1-x-y]Ge[sub x]C[sub y] thin films on Si(001) surfaces is examined by scanning tunneling microscopy. The surface morphology of the film critically depends on the C fraction in the film. Evidence is presented on an atomic scale that the epitaxial growth of Si[sub 1-x-y]Ge[sub x]C[sub y] films with large C fractions is dominated by phase separation between Si–C and Si–Ge, concomitant with C condensation on the surface of the growing films. We find that the addition of a thin (1–2 ML) SiGe interlayer between the Si[sub 1-x-y]Ge[sub x]C[sub y] film and the Si substrate drastically improves the film structure, leading to a planar morphology even with large C fractions present in the film. © 2001 American Institute of Physics.


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