Optical and electrical properties of Al-rich AlGaN alloys

Li, J.; Nam, K. B.; Lin, J. Y.; Jiang, H. X.
November 2001
Applied Physics Letters;11/12/2001, Vol. 79 Issue 20, p3245
Academic Journal
Al[sub x]Ga[sub 1-x]N alloys with x up to 0.7 were grown by metalorganic chemical vapor deposition and their optical properties were investigated by deep UV time-resolved photoluminescence (PL) spectroscopy. Our results revealed that both the activation energy of the PL emission intensity and the PL decay lifetime exhibit sharp increases at x of around 0.4. The results can be understood in terms of the sharp increase of the impurity binding energy or the carrier/exciton localization energy around x=0.4. A three orders of magnitude increase in resistivity of undoped AlGaN alloys at x of around 0.4 was also observed, which further corroborated the optical results. © 2001 American Institute of Physics.


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