Crystal-polarity dependence of Ti/Al contacts to freestanding n-GaN substrate

Kwak, Joon Seop; Lee, K. Y.; Han, J. Y.; Cho, J.; Chae, S.; Nam, O. H.; Park, Y.
November 2001
Applied Physics Letters;11/12/2001, Vol. 79 Issue 20, p3254
Academic Journal
The effect of crystal polarity on the electrical properties of Ti/Al contacts to n-GaN substrate has been investigated. The Ti/Al contacts prepared on Ga-face n-GaN substrate became ohmic with a contact resistivity of 2×10[sup -5] Ω cm[sup 2] after annealing at temperatures higher than 600 °C for 30 s. On the contrary, the contacts on N-face n-GaN substrate exhibited nonlinear current–voltage curve and high Schottky barrier heights over 1 eV were measured at the same annealing conditions. These results could be explained by opposite piezoelectric-field at GaN/AlN heterostructure resulted from different polarity of the GaN substrate. © 2001 American Institute of Physics.


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