Evidence of electron-emission-enhanced nucleation of diamonds in microwave plasma-enhanced chemical vapor deposition

Perng, Kuoguang; Liu, Kuo-Shung; Lin, I-Nan
November 2001
Applied Physics Letters;11/12/2001, Vol. 79 Issue 20, p3257
Academic Journal
The bias-enhanced nucleation (BEN) of diamonds on a Si substrate, using a SiO[sub 2] mask and microwave plasma-enhanced chemical vapor deposition (MPE-CVD), was examined. Experimental results indicate that the electron-emission-enhanced nucleation mechanism proposed herein governs the nucleation of diamonds on the partially patterned SiO[sub 2]/Si substrate. The variation of nucleation density on the partially patterned SiO[sub 2]/Si substrate also reveals that the BEN of diamonds in the MPE-CVD process follows the proposed mechanism. © 2001 American Institute of Physics.


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