Temperature-modulated Si(001):As gas-source molecular beam epitaxy: Growth kinetics and As incorporation

Kim, H.; Glass, G.; Soares, J. A. N. T.; Foo, Y. L.; Desjardins, P.; Greene, J. E.
November 2001
Applied Physics Letters;11/12/2001, Vol. 79 Issue 20, p3263
Academic Journal
Arsenic doping at concentrations C[sub As] ⪆10[sup 18] cm[sup -3] during Si(001) growth from hydride precursors gives rise to strong As surface segregation, low film growth rates R[sub Si], poor electrical activation, and surface roughening. Based upon the results of temperature-programmed desorption studies of Si(001):As surface processes during film deposition, we have investigated the use of temperature-modulated growth including periodic arsenic desorption (10 s at 1000 °C) from the surface segregated layer. Both constant-temperature and temperature-modulated Si(001):As layers were grown at T[sub s]=750 °C, selected as a compromise between maximizing C[sub As] and providing a usable deposition rate, by gas-source molecular beam epitaxy from Si[sub 2]H[sub 6]/AsH[sub 3] mixtures. For constant-temperature growth, R[sub Si] is only 0.08 μm h-1, the fraction of electrically active dopant is 55%, and film surfaces are very rough (rms roughness =110 Å). In sharp contrast, T[sub s]-modulated layers exhibit increases in R[sub Si] by 2.5× to 0.20 μm h-1, 100% electrical activity, and atomically smooth surfaces with =2 Å. The results are explained based upon the competition among As surface segregation, desorption, and incorporation rates. © 2001 American Institute of Physics.


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