H–Si doping profile in GaAs by scanning tunneling microscopy

Grandidier, B.; Silvestre, S.; Nys, J. P.; Me´lin, T.; Bernard, D.; Stie´venard, D.; Constant, E.; Chevallier, J.
November 2001
Applied Physics Letters;11/12/2001, Vol. 79 Issue 20, p3278
Academic Journal
Hydrogen incorporation in n-type Si-doped GaAs layers results in the neutralization of the active dopants and a change of the conductivity along the growth direction. To characterize the active dopant concentration of doped GaAs layers containing hydrogen, we have used secondary ion mass spectroscopy and cross-sectional scanning tunneling microscopy. Spectroscopic measurements are performed as well as conductance images to visualize the variation of the conduction band-edge position. Such a variation, which is related to the concentration of Si–H complexes, allows the determination of the doping profile. © 2001 American Institute of Physics.


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