Highly conductive GaAsNSe alloys grown on GaAs and their nonalloyed ohmic properties

Uesugi, Katsuhiro; Suemune, Ikuo
November 2001
Applied Physics Letters;11/12/2001, Vol. 79 Issue 20, p3284
Academic Journal
Doping properties of Se in GaAsN alloys grown on GaAs (001) substrates by metalorganic-molecular-beam epitaxy were studied. Ditertiarybutylselenide (DtBSe) precursor was used as a Se source. It was found that Se was incorporated into GaAs and GaAsN layers up to a considerable concentration of ∼15%. It was also suggested that the N concentrations in GaAsNSe layers were increased by the DtBSe supply. The GaAsNSe layers were heavily doped n type, and the maximum electron concentration was as high as ∼1×10[sup 20] cm[sup -3]. With the increase of the carrier concentrations, the resistivity of GaAsNSe dramatically decreased to 1.2×10[sup -4] Ω cm. This made it possible to have ohmic contacts without thermal annealing, which indicates that GaAsNSe alloys are an attractive candidate for the formation of nonalloyed ohmic contacts. © 2001 American Institute of Physics.


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