Effect of oxygen stoichiometry on the electrical properties of zirconia gate dielectrics

Ramanathan, Shriram; Muller, David A.; Wilk, Glen D.; Park, Chang Man; McIntyre, Paul C.
November 2001
Applied Physics Letters;11/12/2001, Vol. 79 Issue 20, p3311
Academic Journal
In this letter, we report on electrical and microstructural properties of ultrathin zirconia dielectrics grown on SiO[sub 2] by ultraviolet (UV) ozone oxidation and natural oxidation (no UV light). Capacitance–voltage (C–V) measurements were performed at multiple frequencies on capacitors fabricated from a ZrO[sub 2]–SiO[sub 2] stack. It was found that the C–V curves from samples grown by natural oxidation were distorted and showed severe frequency dependence while samples grown with UV light exposure under otherwise identical conditions had superior electrical behavior. Loss tangent measurements and detailed electron energy loss spectroscopy studies performed on the two samples revealed that the sample grown by natural oxidation was highly oxygen deficient, and this led to its poor electrical properties. © 2001 American Institute of Physics.


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