TITLE

Formation of ordered Ge quantum dots on the Si(111)–(7×7) surface

AUTHOR(S)
Zhang, Y. P.; Yan, L.; Xie, S. S.; Pang, S. J.; Gao, H.-J.
PUB. DATE
November 2001
SOURCE
Applied Physics Letters;11/12/2001, Vol. 79 Issue 20, p3317
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We present a pathway for the formation of ordered Ge quantum dots on Si(111)–(7×7) substrate. Self-assembled growth of Ge quantum dots on the Si(111)–(7×7) surface has been investigated using scanning tunneling microscopy. The Ge is grown on the substrate by solid phase epitaxy at room temperature. It has been found that the deposited submonolayer Ge can aggregate and form ordered Ge quantum dots on the surface through controlling the annealing temperature. The formation of ordered Ge quantum dots is due to the preferential adsorption sites of Ge on Si(111)–(7×7). The formed Ge quantum dots may have a great potential in the application of nanodevices. © 2001 American Institute of Physics.
ACCESSION #
5549491

 

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