Controlled creation of a carbon nanotube diode by a scanned gate

Freitag, Marcus; Radosavljevic, Marko; Zhou, Yangxin; Johnson, A. T.; Smith, Walter F.
November 2001
Applied Physics Letters;11/12/2001, Vol. 79 Issue 20, p3326
Academic Journal
We use scanning gate microscopy to precisely locate the gating response in field-effect transistors (FETs) made from semiconducting single-wall carbon nanotubes. A dramatic increase in transport current occurs when the device is electrostatically doped with holes near the positively biased electrode. We ascribe this behavior to the turn-on of a reverse biased Schottky barrier at the interface between the p-doped nanotube and the electrode. By positioning the gate near one of the contacts, we convert the nanotube FET into a rectifying nanotube diode. These experiments both clarify a longstanding debate over the gating mechanism for nanotube FETs and indicate a strategy for diode fabrication based on controlled placement of acceptor impurities near a contact. © 2001 American Institute of Physics.


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