Tailoring detection bands of InAs quantum-dot infrared photodetectors using In[sub x]Ga[sub 1-x]As strain-relieving quantum wells

Kim, Eui-Tae; Chen, Zhonghui; Madhukar, Anupam
November 2001
Applied Physics Letters;11/12/2001, Vol. 79 Issue 20, p3341
Academic Journal
We report on tailoring detection bands of InAs quantum-dot infrared photodetectors (QDIPs) using In[sub x]Ga[sub 1-x]As strain-relieving capping layers that also act as quantum wells (QWs). QDIPs with InAs QDs capped by a 20 ML In[sub 0.15]Ga[sub 0.85]As QW show a sharp photoresponse at ∼9 μm, while the counterpart QDIPs without QWs show broad photoresponse in the 5–7 μm range. The excited states involved in the intraband transitions in QDIPs with the In[sub 0.15]Ga[sub 0.85]As QW appear to be coupled QD and QW electron excited states. © 2001 American Institute of Physics.


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