TITLE

Strained Ge channel p-type metal–oxide–semiconductor field-effect transistors grown on Si[sub 1-x]Ge[sub x]/Si virtual substrates

AUTHOR(S)
Lee, Minjoo L.; Leitz, C. W.; Cheng, Z.; Pitera, A. J.; Langdo, T.; Currie, M. T.; Taraschi, G.; Fitzgerald, E. A.; Antoniadis, Dimitri A.
PUB. DATE
November 2001
SOURCE
Applied Physics Letters;11/12/2001, Vol. 79 Issue 20, p3344
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We have fabricated strained Ge channel p-type metal–oxide–semiconductor field-effect transistors (p-MOSFETs) on Si[sub 0.3]Ge[sub 0.7] virtual substrates. The poor interface between silicon dioxide (SiO[sub 2]) and the Ge channel was eliminated by capping the strained Ge layer with a relaxed, epitaxial silicon surface layer grown at 400 °C. Ge p-MOSFETs fabricated from this structure show a hole mobility enhancement of nearly eight times that of co-processed bulk Si devices, and the Ge MOSFETs have a peak effective mobility of 1160 cm2/V s. These MOSFETs demonstrate the possibility of creating a surface channel enhancement-mode MOSFET with buried channel-like transport characteristics. © 2001 American Institute of Physics.
ACCESSION #
5549482

 

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