TITLE

Evolution of Diamond Crystal Shape with Boron Concentration during CVD Growth

AUTHOR(S)
Issaoui, R.; Silva, F.; Tallaire, A.; Mille, V.; Achard, J.; Gicquel, A.
PUB. DATE
November 2010
SOURCE
AIP Conference Proceedings;11/1/2010, Vol. 1292 Issue 1, p149
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Homoepitaxially grown boron-doped diamond films have been extensively studied for many years, in particular for the development of power-electronic devices. Coplanar structures have already been fabricated and characterized but, in such structures, the current is limited by a high series resistance. A vertical component could allow overcoming this issue but this requires that thick heavily boron-doped diamond crystals with a large usable top surface are grown. In this paper we used a 3D geometrical model in order to study the evolution of the crystal shape of thick diamond crystals as a function of boron doping. The growth parameters used in the model were determined by measuring the growth rate in different crystalline orientations. It was found that the addition of boron to the gas phase promotes the appearance of large {110} and {113} crystalline faces. {110} faces have a detrimental effect on the crystal since they can generate large stress and promote crystal break-up. The results predicted by the model are consistent with that obtained for a thick boron-doped diamond single crystal.
ACCESSION #
55199994

 

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