Note: Electrical resolution during conductive atomic force microscopy measurements under different environmental conditions and contact forces

Lanza, M.; Porti, M.; Nafría, M.; Aymerich, X.; Whittaker, E.; Hamilton, B.
October 2010
Review of Scientific Instruments;Oct2010, Vol. 81 Issue 10, p106110
Academic Journal
Conductive atomic force microscopy experiments on gate dielectrics in air, nitrogen, and UHV have been compared to evaluate the impact of the environment on topography and electrical measurements. In current images, an increase of the lateral resolution and a reduction of the conductivity were observed in N2 and, especially, in UHV (where current depends also on the contact force). Both effects were related to the reduction/elimination of the water layer between the tip and the sample in N2/UHV. Therefore, since current measurements are very sensitive to environmental conditions, these factors must be taken into consideration when comparisons between several experiments are performed.


Related Articles

  • Surface modified silica mesoporous films as a low dielectric constant intermetal dielectric. Yu, Suzhu; Wong, Terence K. S.; Pita, Kantisara; Hu, Xiao; Ligatchev, Valeri // Journal of Applied Physics;9/15/2002, Vol. 92 Issue 6, p3338 

    Silica mesoporous films with low dielectric constant were successfully fabricated by a multiple-step sol-gel process. Various surface modifications were conducted to make the surface of the films hydrophobicity, which was proved very effective to maintain the low dielectric properties of the...

  • Atomic layer deposition of gadolinium scandate films with high dielectric constant and low leakage current. Kim, Kyoung H.; Farmer, Damon B.; Lehn, Jean-Sebastien M.; Rao, P. Venkateswara; Gordon, Roy G. // Applied Physics Letters;9/25/2006, Vol. 89 Issue 13, p133512 

    GdScO3 films were deposited on hydrogenated silicon substrates by atomic layer deposition. The films were pure and amorphous, both as-deposited and after a 5 min anneal at 950 °C. Cross-sectional transmission electron microscopy revealed a sharp, smooth interface between GdScO3 and Si....

  • Breakdown kinetics of Pr2O3 films by conductive-atomic force microscopy. Fiorenza, Patrick; Lo Nigro, Raffaella; Raineri, Vito; Lombardo, Salvatore; Toro, Roberta G.; Malandrino, Graziella; Fragalà, Ignazio L. // Applied Physics Letters;12/5/2005, Vol. 87 Issue 23, p231913 

    The dielectric breakdown (BD) kinetics of praseodymium thin films has been determined by comparison between current-voltage measurements on large-area (up to 78.54 μm2) metal-oxide-semiconductor structures and conductive-atomic force microscopy (C-AFM). C-AFM clearly images the weak BD single...

  • Atomic layer deposition of HfO2 investigated in situ by means of a noncontact atomic force microscopy.  // Materials Science (0137-1339);2010, Vol. 28 Issue 3, p731 

    No abstract available.

  • Dysprosium scandate thin films as an alternate amorphous gate oxide prepared by metal-organic chemical vapor deposition. Thomas, Reji; Ehrhart, Peter; Luysberg, Martina; Boese, Markus; Waser, Rainer; Roeckerath, Martin; Rije, Eduard; Schubert, Juergen; Van Elshocht, Sven; Caymax, Matty // Applied Physics Letters;12/4/2006, Vol. 89 Issue 23, p232902 

    Dysprosium scandate (DyScO3) thin films were deposited on Si substrates using metal-organic chemical vapor deposition. Individual source precursors of Dy and Sc were used and deposition temperatures ranged from 480 to 700 °C. Films were amorphous with low root mean square roughness (<=2...

  • Self-assembled-monolayer film islands as a self-patterned-mask for SiO[sub 2] thickness.... Komeda, T.; Namba, K. // Applied Physics Letters;6/23/1997, Vol. 70 Issue 25, p3398 

    Presents a method for measuring ultrathin silicon dioxide film thickness using atomic force microscopy. Composition of the process; Characteristics of octadecyltrichlorosilane film; Advantages of using the method.

  • Field evaporation of gold atoms onto a silicon dioxide film by using an atomic force microscope. Koyanagi, Hajime; Hosaka, Sumio; Imura, Ryo // Applied Physics Letters;10/30/1995, Vol. 67 Issue 18, p2609 

    Investigates the field evaporation of gold atoms onto silicon dioxide films using an atomic force microscope. Measurement of the threshold voltage dependence of SiO[sub 2] thickness; Possibility of gold dot formation on SiO[sub 2] films; Application of energy dispersive x-ray spectroscopy to...

  • Conductive atomic force microscopy studies of thin SiO2 layer degradation. Fiorenza, Patrick; Polspoel, Wouter; Vandervorst, Wilfried // Applied Physics Letters;5/29/2006, Vol. 88 Issue 22, p222104 

    The dielectric degradation of ultrathin (∼2 nm) silicon dioxide (SiO2) layers has been investigated by constant and ramped voltage stresses with the conductive atomic force microscopy (CAFM). CAFM imaging shows clearly the lateral degradation propagation and its saturation. Current-voltage...

  • Synthesis and Physical Properties of Nanocomposites (SnO2)x(In2O3)1-x (x = 0 - 1) for Gas Sensors and Optoelectronics. Rembeza, Stanislav; Voronov, Pavel; Rembeza, Ekaterina // Sensors & Transducers (1726-5479);Nov2010, Vol. 122 Issue 11, p46 

    Experimental results on synthesis of thin film (< 1 μm) nanocomposites (SnO2)x(In2O3)1-x in the whole range of x = (0 – 1) mass. % are presented. Film nanocomposites were prepared by highfrequency magnetron sputtering of metal oxide targets in the controlled ambient Ar+O2. Films were...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics