TITLE

Pulse bias sputtering of copper onto insulating surfaces

AUTHOR(S)
Barnat, E. V.; Lu, T.-M.; Little, J.
PUB. DATE
November 2001
SOURCE
Journal of Applied Physics;11/15/2001, Vol. 90 Issue 10, p4946
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The effects of charge accumulation during bias sputtering of copper onto an insulating material are studied. To eliminate the effects of charge accumulation, we periodically apply a pulse bias to the electrode. Microstructure and electrical properties of the sputtered copper films grown on silicon dioxide are measured as a function of the pulse bias frequency. By comparing the observed properties of these films grown under a pulse bias to those grown under a dc bias (with a conducting path to the electrode), the effectiveness of the pulse bias in controlling the ion energy distribution is demonstrated. © 2001 American Institute of Physics.
ACCESSION #
5439504

 

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