Green emission from cerium hydroxide layers formed in Si/In/CeO[sub 2]/Si structures

Kim, Chong-Geol
November 2001
Applied Physics Letters;11/5/2001, Vol. 79 Issue 19, p3047
Academic Journal
Green photoluminescence (PL) was observed from the Si/In/CeO[sub 2] on Si substrates at room temperature. Indium was very thinly deposited on CeO[sub 2] at 400 °C. X-ray photoelectron spectroscopy indicated the formation of a cerium hydroxide in the indium-included Si/CeO[sub 2] structure. The reacting CeO[sub 2] with In became the defective CeO[sub 2-x], and then the defective CeO[sub 2-x] was changed to Ce(OH)[sub 4] in poor vacuums and air. The green PL was due to Ce(OH)[sub 4]. The luminescence disappeared by high-temperature annealing. Another PL peak appeared from the sample annealed at 1000 °C. © 2001 American Institute of Physics.


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