Metalorganic vapor phase epitaxy growth of crack-free AlN on GaN and its application to high-mobility AlN/GaN superlattices

Yamaguchi, Shigeo; Kosaki, Masayoshi; Watanabe, Yasuyukihiro; Yukawa, Yohei; Nitta, Shugo; Amano, Hiroshi; Akasaki, Isamu
November 2001
Applied Physics Letters;11/5/2001, Vol. 79 Issue 19, p3062
Academic Journal
We have succeeded in growing crack-free AlN of even 0.5 μm thickness on GaN by metalorganic vapor phase epitaxy. A (0001) sapphire substrate was used. Crack-free AlN was grown on GaN at 1000 °C with N[sub 2] carrier gas. An AlN layer was grown on GaN of 2 μm thickness grown at 1050 °C, following the low-temperature deposition of an AlN buffer layer of 30 nm. No cracks were observed in the microphotographs of AlN on GaN grown using N[sub 2]. X-ray diffraction analysis revealed that AlN/GaN superlattices (SLs) were coherently grown on GaN, and satellite peaks up to the third order were observed. The structure of AlN/GaN SLs on GaN showed a maximum electron mobility of 1580 cm[sup 2]/V s at room temperature and a nominal sheet carrier density of 8.4×10[sup 12] cm[sup -2]. © 2001 American Institute of Physics.


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