Enabling electron diffraction as a tool for determining substrate temperature and surface morphology

LaBella, V. P.; Bullock, D. W.; Emery, C.; Ding, Z.; Thibado, P. M.
November 2001
Applied Physics Letters;11/5/2001, Vol. 79 Issue 19, p3065
Academic Journal
The reconstruction transitions for the GaAs(001) surface have been identified as a function of the band gap-derived substrate temperature and As[sub 4] beam equivalent pressure. Surface morphology measurements using in situ scanning tunneling microscopy reveal that the surface spontaneously forms a random distribution of two-dimensional islands. The onset of island formation is coincident with the reflected high-energy electron diffraction pattern changing from the β to α subphase of the (2×4) reconstruction. An electron diffraction-based method for determining the substrate temperature and engineering the surface morphology with a desired amount of roughness is presented. © 2001 American Institute of Physics.


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