TITLE

Enabling electron diffraction as a tool for determining substrate temperature and surface morphology

AUTHOR(S)
LaBella, V. P.; Bullock, D. W.; Emery, C.; Ding, Z.; Thibado, P. M.
PUB. DATE
November 2001
SOURCE
Applied Physics Letters;11/5/2001, Vol. 79 Issue 19, p3065
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The reconstruction transitions for the GaAs(001) surface have been identified as a function of the band gap-derived substrate temperature and As[sub 4] beam equivalent pressure. Surface morphology measurements using in situ scanning tunneling microscopy reveal that the surface spontaneously forms a random distribution of two-dimensional islands. The onset of island formation is coincident with the reflected high-energy electron diffraction pattern changing from the β to α subphase of the (2×4) reconstruction. An electron diffraction-based method for determining the substrate temperature and engineering the surface morphology with a desired amount of roughness is presented. © 2001 American Institute of Physics.
ACCESSION #
5439403

 

Related Articles

  • Morphological model of reflection high-energy electron-diffraction intensity oscillations during.... Shitara, T.; Vvedensky, D.D. // Applied Physics Letters;3/23/1992, Vol. 60 Issue 12, p1504 

    Measures reflection high-energy electron diffraction (RHEED) on vicinal gallium arsenide surfaces. Reproduction of misorientation-angle dependence and gallium-flux dependence of the growth mode transitions; Similarity of the surface step-density evolution to RHEED oscillations; Significance of...

  • Role of aperiodic surface defects on the intensity of electron diffraction spots. Bullock, D. W.; Ding, Z.; Thibado, P. M.; LaBella, V. P. // Applied Physics Letters;4/21/2003, Vol. 82 Issue 16, p2586 

    A random distribution of two-dimensional gallium arsenide (GaAs) islands is found to effect the intensity of the electron diffraction pattern from the GaAs(001) surface. By utilizing the spontaneous island formation phenomenon as well as submonolayer deposition, the island coverage is...

  • Real-time monitoring of the reaction of H2S on GaAs. Jönsson, Jan; Deppert, Knut; Samuelson, Lars // Journal of Applied Physics;11/15/1993, Vol. 74 Issue 10, p6146 

    Presents a study which examined in real time the reaction of H[sub2]S on (100)-oriented gallium arsenide surfaces by an optical technique. Materials and methods used; Overview of the reflectance difference response when exchanging arsine with H[sub2]S; Reaction of H[sub2]S to gallium-terminated...

  • Multilayer step formation after As adsorption on Si (100): Nucleation of GaAs on vicinal Si. Pukite, P. R.; Cohen, P. I. // Applied Physics Letters;6/15/1987, Vol. 50 Issue 24, p1739 

    We have used reflection high-energy electron diffraction to characterize the initial surface of misoriented Si (100) and then to follow the nucleation of GaAs. Measurement of the diffracted intensity along the length of the specular streak shows sharp structure due to an ordered array of steps....

  • Direct observation by reflection high-energy electron diffraction of amorphous-to-crystalline transition in the growth of Sb on GaAs(110). Savage, D. E.; Lagally, M. G. // Applied Physics Letters;6/15/1987, Vol. 50 Issue 24, p1719 

    Direct evidence, using reflection high-energy electron diffraction, is found for a transition, at a specific thickness, from an amorphous to a crystalline state in Sb deposited on GaAs(110). After crystallization, Sb exists as small, 30–40 Å crystallites with a (0001) contact plane...

  • Realization of high mobility in inverted AlxGa1-xAs/GaAs heterojunctions. Cho, N. M.; Kim, D. J.; Madhukar, A.; Newman, P. G.; Smith, D. D.; Aucoin, T.; Iafrate, G. J. // Applied Physics Letters;6/13/1988, Vol. 52 Issue 24, p2037 

    We report reproducible realization of GaAs/Al0.25 Ga0.75 As(100) inverted heterojunctions with liquid-nitrogen electron mobilities in excess of 105 cm2 /(V s). This is made possible through use of reflection high-energy electron-diffraction (RHEED) intensity dynamics determined optimized growth...

  • Growth process in atomic layer epitaxy of Zn chalcogenide single crystalline films on (100)GaAs. Yao, Takafumi; Takeda, Toshihiko // Applied Physics Letters;1/13/1986, Vol. 48 Issue 2, p160 

    Atomic layer epitaxy of zinc chalcogenide single crystalline films on a (001) GaAs substrate is studied. It is observed that the average thickness per one cycle of opening and closing the shutters of the constituent elements corresponds to one monolayer thickness. The initial and successive...

  • Gallium- and arsenic-induced oscillations of intensity of reflection high-energy electron diffraction in the growth of (001) GaAs by chemical beam epitaxy. Chiu, T. H.; Tsang, W. T.; Cunningham, J. E.; Robertson, A. // Journal of Applied Physics;9/15/1987, Vol. 62 Issue 6, p2302 

    Presents a study which reported the observations of a damped intensity oscillation using reflection high-energy electron diffraction during the growth of gallium arsenide by chemical beam epitaxy using triethylgallium and arsine. Experimental procedure; Description of the appearance of the...

  • Initial growth stage and optical properties of a three-dimensional InAs structure on GaAs. Nabetani, Y.; Ishikawa, T.; Noda, S.; Sasaki, A. // Journal of Applied Physics;7/1/1994, Vol. 76 Issue 1, p347 

    Presents a study which focused on the initial growth stage and optical properties of a three-dimensional indium arsenide structure on gallium arsenide. Results of reflection high-energy electron-diffraction observation; Findings of the transmission electron microscope observation; Details of...

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics