TITLE

Reflection high-energy electron diffraction studies of epitaxial oxide seed-layer growth on rolling-assisted biaxially textured substrate Ni(001): The role of surface structure and chemistry

AUTHOR(S)
Cantoni, C.; Christen, D. K.; Feenstra, R.; Goyal, A.; Ownby, G. W.; Zehner, D. M.; Norton, D. P.
PUB. DATE
November 2001
SOURCE
Applied Physics Letters;11/5/2001, Vol. 79 Issue 19, p3077
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We present a study of the {100}<100> biaxially textured Ni(001) surface and seed-layer growth using in situ reflection high-energy electron diffraction and Auger electron spectroscopy. Our observations are consistent with formation of a c(2×2) two-dimensional superstructure due to the surface segregation of sulfur contained in the metal. We show that this superstructure can have a dramatic effect on the heteroepitaxial growth of oxide seed layers. In particular, the surface superstructure promotes the (200) epitaxial oxide growth of Y[sub 2]O[sub 3]-stabilized ZrO[sub 2], which is necessary for the development of high-J[sub c] superconducting films for coated conductors. © 2001 American Institute of Physics.
ACCESSION #
5439399

 

Related Articles

  • Metal/CaF2/Si heterostructures: Interface evolution and electronic properties. Vos, M.; Xu, F.; Weaver, J. H. // Journal of Applied Physics;9/15/1989, Vol. 66 Issue 6, p2467 

    Deals with interface formation for Ti, Co, Pd and Au overlayers grown on thin epitaxial CaF[sub2] layers on Si(111) with photoelectron spectroscopy and low-energy electron diffraction. Experimental details; Results and discussion; Conclusion.

  • Exact one-dimensional pair correlation functions of a monolayer/substrate system. Pimbley, J. M.; Lu, T.-M. // Journal of Applied Physics;2/15/1985, Vol. 57 Issue 4, p1121 

    Deals with a study that derived an exact expression for one-dimensional atomic pair correlation function of a combined overlayer and substrate system in first stages of epitaxy. Use of pair correlation function to evaluate the widths and shapes of low-energy electron diffraction intensity...

  • Epitaxial growth and surface metallic nature of LaNiO3 thin films. Tsubouchi, K.; Ohkubo, I.; Kumigashira, H.; Matsumoto, Y.; Ohnishi, T.; Lippmaa, M.; Koinuma, H.; Oshima, M. // Applied Physics Letters;Jun2008, Vol. 92 Issue 26, p262109 

    In situ epitaxial growth control of LaNiO3 (LNO) films at high oxygen pressure has been successfully achieved using a combination of pulsed laser deposition and high-pressure reflection high-energy electron diffraction (RHEED). RHEED oscillations, indicative of epitaxial layer-by-layer growth,...

  • Self-Organized Ni Nanocrystal Embedded in BaTiO3 Epitaxial Film. Ge, F. F.; Wang, X. M.; Cao, L. H.; Li, J.; Zhang, H. L.; Wang, H. P.; Dai, Y.; Wang, H. B.; Shen, J.; Wu, W. D. // Nanoscale Research Letters;May2010, Vol. 5 Issue 5, p834 

    Ni nanocrystals (NCs) were embedded in BaTiO3 epitaxial films using the laser molecular beam epitaxy. The processes involving the self-organization of Ni NCs and the epitaxial growth of BaTiO3 were discussed. With the in situ monitoring of reflection high-energy electron diffraction, the...

  • Stabilization of the NiF orthorhombic phase in epitaxial heterostructures on CaF/Si(111) substrates. Banshchikov, A.; Koshmak, K.; Krupin, A.; Sokolov, N. // Technical Physics Letters;Sep2012, Vol. 38 Issue 9, p809 

    Epitaxial NiF2 layers have been grown for the first time on CaF(111)/Si(111) substrates by molecular beam epitaxy. By high-energy electron diffraction and X-ray diffractometry, it has been established that the layers crystallize in the metastable orthorhombic phase and the epitaxial relations at...

  • Liquid phase hydrogenation of adiponitrile over amorphous alloy nickel catalyst. Liu, Sihua; Hao, Fang; Liu, Pingle; Luo, He′an; Liao, Hongguang // Research on Chemical Intermediates;Aug2015, Vol. 41 Issue 8, p5879 

    Supported Ni-B and Ni-B-K amorphous alloy catalysts were prepared by chemical reduction method and characterized by nitrogen adsorption-desorption, power X-ray diffraction, selected area electron diffraction, and scanning electron microscopy. The prepared catalysts were tested in liquid phase...

  • Short-pulse supersonic nozzle beam epitaxy: A new approach for submonolayer controlled growth. Suian Zhang; Jie Cui // Applied Physics Letters;2/28/1994, Vol. 64 Issue 9, p1105 

    Demonstrates an approach for submonolayer controlled growth using short-pulse supersonic nozzle beam epitaxy. Use of short-pulse chemical beams; Details on the growth behavior of gallium arsenide by reflection high-energy electron diffraction; Factors contributing to the enhancement of surface...

  • Self-regulated growth of tilted superlattices by atomic layer epitaxy. Hartmann, J. M.; Charleux, M.; Cibert, J.; Mariette, H. // Applied Physics Letters;6/15/1998, Vol. 72 Issue 24 

    We report on a self-regulated method for the growth of tilted superlattices. It relies on the reconstructed surfaces alternatively stabilized during the atomic layer epitaxy (ALE) of compound semiconductors. The c(2×2)+(2×1) Cd-stabilized and the (2×1) Te-stabilized surfaces...

  • Combined Rayleigh and Raman scattering study of AlxGa1-xAs grown via molecular beam epitaxy under reflection high-energy electron diffraction determined growth conditions. Tang, W. C.; Lao, P. D.; Madhukar, A.; Cho, N. M. // Applied Physics Letters;1/4/88, Vol. 52 Issue 1, p42 

    Rayleigh and Raman scattering studies reveal a direct correlation between the degree of disorder and growth kinetics attendant to the chosen growth conditions in molecular beam epitaxial growth. This inference is derived from studies on AlxGa1-xAs alloys grown under growth conditions indicated...

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics