Formation of nonradiative defects in molecular beam epitaxial GaN[sub x]As[sub 1-x] studied by optically detected magnetic resonance

Thinh, N. Q.; Buyanova, I. A.; Chen, W. M.; Xin, H. P.; Tu, C. W.
November 2001
Applied Physics Letters;11/5/2001, Vol. 79 Issue 19, p3089
Academic Journal
The formation of two nonradiative defects (i.e., an As[sub Ga]-related complex and an unknown deep-level defect with g=2.03) in GaN[sub x]As[sub 1-x] epilayers and GaAs/GaN[sub x]As[sub 1-x] multiple-quantum-well structures, grown by molecular beam epitaxy, is studied by the optically detected magnetic resonance technique. It is shown that contributions by these defects in competing carrier recombination strongly vary with the nitrogen composition. An increase in the growth temperature or postgrowth rapid thermal annealing significantly reduces the influence of the nonradiative defects studied, and is accompanied by a remarkable improvement in the optical properties of the structures. © 2001 American Institute of Physics.


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