On the interface states generated under different stress conditions

Zhang, W. D.; Zhang, J. F.; Uren, M. J.; Groeseneken, G.; Degraeve, R.; Lalor, M.; Burton, D.
November 2001
Applied Physics Letters;11/5/2001, Vol. 79 Issue 19, p3092
Academic Journal
After dry oxidation and when annealing in a hydrogen environment is carefully avoided, the energy distribution of interface states has two peaks, one in the lower and one in the upper half of the silicon band gap. Following hydrogen passivation, however, the interface states created by irradiation or electron injection typically have only one peak in the upper half of the gap. This letter investigates how to generate a double peak distribution by electrical stress and we attempt to link the distribution with the generation mechanism. © 2001 American Institute of Physics.


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