TITLE

Carbon acceptor doping efficiency in GaAs grown by metalorganic chemical vapor deposition

AUTHOR(S)
Mimila-Arroyo, J.; Lusson, A.; Chevallier, J.; Barbe´, M.; Theys, B.; Jomard, F.; Bland, S. W.
PUB. DATE
November 2001
SOURCE
Applied Physics Letters;11/5/2001, Vol. 79 Issue 19, p3095
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Carbon doping efficiency in GaAs grown by metalorganic chemical vapor deposition using intrinsic and extrinsic doping sources is studied. Independent of the carbon source, carbon hydrogen complexes are systematically present and depending on the growth conditions, carbon dimers can be present and form complexes with hydrogen as well. Carbon–hydrogen related complexes and dimers reduce the hole concentration decreasing the doping efficiency. Additionally, the carbon dimer introduces a deep level, decreases the hole mobility and hydrogen bonds stronger to it than to isolated carbon. Depending on the growth conditions it is possible to reach 100% doping efficiency with high hole mobility. © 2001 American Institute of Physics.
ACCESSION #
5439393

 

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