Epitaxy and magnetotransport properties of the diluted magnetic semiconductor p-Be[sub (1-x)]Mn[sub x]Te

Hansen, L.; Ferrand, D.; Richter, G.; Thierley, M.; Hock, V.; Schwarz, N.; Reuscher, G.; Schmidt, G.; Molenkamp, L. W.; Waag, A.
November 2001
Applied Physics Letters;11/5/2001, Vol. 79 Issue 19, p3125
Academic Journal
We report on the molecular-beam epitaxial growth and magnetotransport properties of p-type BeMnTe, a ferromagnetic diluted magnetic semiconductor. BeMnTe thin-film structures can be grown almost lattice matched to GaAs for Mn concentrations up to 10%. A high p-type doping with nitrogen can be achieved by using a rf plasma source. BeMnTe and BeTe layers have been characterized by magnetotransport measurements. At low temperatures, the BeMnTe samples exhibit a large anomalous Hall effect. A hysteresis in the anomalous Hall effect appears below 2.5 K in the most heavily doped sample, which indicates the occurrence of a ferromagnetic phase. © 2001 American Institute of Physics.


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