TITLE

Oxidation states in scanning-probe-induced Si[sub 3]N[sub 4] to SiO[sub x] conversion studied by scanning photoemission microscopy

AUTHOR(S)
Klauser, R.; Hong, I.-H.; Su, H.-J.; Chen, T. T.; Gwo, S.; Wang, S.-C.; Chuang, T. J.; Gritsenko, V. A.
PUB. DATE
November 2001
SOURCE
Applied Physics Letters;11/5/2001, Vol. 79 Issue 19, p3143
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The biased conductive probe of an atomic force microscope can induce local oxidation in ambience for converting silicon nitride films to silicon oxides with high reaction rate. Spatially resolved photoemission analysis with submicron resolution has been utilized to study the oxidation states of converted silicon oxide patterns in comparison with the surrounding Si[sub 3]N[sub 4] layer. The core level shift of the Si 2p photoelectron peak and the spectral features in the valence band reveal a complete conversion of silicon nitride to silicon oxide at a bias voltage of 10 V, with no remaining nitrogen left. The major oxide is SiO[sub 2]. The observed oxidation states of Si[sup 4+], Si[sup 3+], and Si[sup 2+] show a gradient depth distribution indicating excess silicon in the layer. © 2001 American Institute of Physics.
ACCESSION #
5439360

 

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