Enhanced hysteresis in the semiconductor-to-metal phase transition of VO[sub 2] precipitates formed in SiO[sub 2] by ion implantation

Lopez, R.; Boatner, L. A.; Haynes, T. E.; Haglund, R. F.; Feldman, L. C.
November 2001
Applied Physics Letters;11/5/2001, Vol. 79 Issue 19, p3161
Academic Journal
A strongly enhanced hysteresis with a width of >34 °C has been observed in the semiconductor-to-metal phase transition of submicron-scale VO[sub 2] precipitates formed in the near-surface region of amorphous SiO[sub 2] by the stoichiometric coimplantation of vanadium and oxygen and subsequent thermal processing. This width is approximately an order of magnitude larger than that reported previously for the phase transition of VO[sub 2] particles formed in Al[sub 2]O[sub 3] by a similar technique. The phase transition is accompanied by a significant change in infrared transmission. The anomalously wide hysteresis loop observed here for the VO[sub 2]/SiO[sub 2] system can be exploited in optical data storage and switching applications in the infrared region. © 2001 American Institute of Physics.


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