TITLE

Excellent charge offset stability in a Si-based single-electron tunneling transistor

AUTHOR(S)
Zimmerman, Neil M.; Huber, William H.; Fujiwara, Akira; Takahashi, Yasuo
PUB. DATE
November 2001
SOURCE
Applied Physics Letters;11/5/2001, Vol. 79 Issue 19, p3188
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We have measured the long-term drift and the short-term 1/f noise in the charge offset Q[sub 0](t) in two Si-based single-electron tunneling transistors (SETTs). In contrast to metal-based SETTs, these devices show excellent charge stability, drifting by less than 0.01e over weeks. The short-term 1/f noise magnitude is similar to the metal-based devices, demonstrating that different mechanisms are responsible for the short-term noise versus the long-term drift. Finally, we show that, in addition to the excellent stability over time, it may be possible to make the devices more robust with respect to voltage-induced instability as well. © 2001 American Institute of Physics.
ACCESSION #
5439327

 

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