High-power and long-lifetime InAs/GaAs quantum-dot laser at 1080 nm

Liu, Hui-Yun; Xu, Bo; Wei, Yong-Qiang; Ding, Ding; Qian, Jia-Jun; Han, Qin; Liang, Ji-Ben; Wang, Zhan-Guo
October 2001
Applied Physics Letters;10/29/2001, Vol. 79 Issue 18, p2868
Academic Journal
High power and long lifetime have been demonstrated for a semiconductor quantum-dot (QD) laser with five-stacked InAs/GaAs QDs separated by an InGaAs strain-reducing layer (SRL) and a GaAs spacer layer as an active medium. The QD lasers exhibit a peak power of 3.6 W at 1080 nm, a quantum slope efficiency of 84.6%, and an output-power degradation rate of 5.6%/1000 h with continuous-wave constant-current operation at room temperature. A comparative reliability investigation indicates that the lifetime of the InAs/GaAs QD laser with the InGaAs SRL is much longer than that of a QD laser without the InGaAs SRL. This improved lifetime of the QD laser could be explained by the reduction of strain in and around InAs QDs induced by the InGaAs SRL. © 2001 American Institute of Physics.


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