TITLE

Identification of aging mechanisms in the optical and electrical characteristics of light-emitting diodes

AUTHOR(S)
Pursiainen, Otto; Linder, Norbert; Jaeger, Arndt; Oberschmid, Raimund; Streubel, Klaus
PUB. DATE
October 2001
SOURCE
Applied Physics Letters;10/29/2001, Vol. 79 Issue 18, p2895
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We report new methods of identifying the effects of aging on the light–current (L–I) and current–voltage (I–V) characteristics of AlInGaP light-emitting diodes (LEDs). We believe that these methods are also applicable to other III–V compound semiconductors. We observe a broadening of the nonlinear range of the L–I characteristic accompanied by a shift to higher currents in the I–V characteristic. These features can be attributed to an increase of nonradiative recombination processes in the active layer. A second process, however, can lead to an increase of the LED output power. We conclude from an analysis of the current dependence that this process is due to a different mechanism. © 2001 American Institute of Physics.
ACCESSION #
5402567

 

Related Articles

  • White light emission from exciplex using tris-(8-hydroxyquinoline)aluminum as chromaticity-tuning layer. Feng, Jing; Li, Feng; Gao, Wenbao; Liu, Shiyong; Liu, Yu; Wang, Yue // Applied Physics Letters;6/18/2001, Vol. 78 Issue 25, p3947 

    We demonstrate efficient organic white light-emitting devices (LEDs), using N,N′-diphenyl-N,N′-bis(1-naphthyl)-(1,1′-biphenyl)-4,4& prime;-diamine (NPB) as the hole-transporting layer, 1,6-bis(2-hydroxyphenyl)pyridine boron complex [(dppy)BF)] as the emitting layer,...

  • Milliwatt operation of AlGaN-based single-quantum-well light emitting diode in the ultraviolet region. Nishida, Toshio; Saito, Hisao; Kobayashi, Naoki // Applied Physics Letters;6/18/2001, Vol. 78 Issue 25, p3927 

    By introducing a single-quantum-well active layer and a high-Al-content carrier blocking layer, the output power of an AlGaN-based ultraviolet light-emitting diode has been improved by one order of magnitude. Optical output of 1 mW was achieved at the emission peak wavelength of 341-343 nm. ©...

  • Voltage drop in an (AlxGa1-x)0.5In0.5P light-emitting diode probed by Kelvin probe force microscopy. Katzer, Kl.-D.; Mertin, W.; Bacher, G.; Jaeger, A.; Streubel, K. // Applied Physics Letters;9/4/2006, Vol. 89 Issue 10, p103522 

    The authors report on quantitative investigations of the voltage drop across the heterostructure layer sequence of an operating AlGaInP light-emitting diode via Kelvin probe force microscopy for different external biases between -2.0 and +1.86 V. In the low voltage regime, most of the voltage...

  • Efficiency droop in AlGaInP and GaInN light-emitting diodes. Shim, Jong-In; Han, Dong-Pyo; Kim, Hyunsung; Shin, Dong-Soo; Lin, Guan-Bo; Meyaard, David S.; Shan, Qifeng; Cho, Jaehee; Fred Schubert, E.; Shim, Hyunwook; Sone, Cheolsoo // Applied Physics Letters;3/12/2012, Vol. 100 Issue 11, p111106 

    At room temperature, AlGaInP pn-junction light-emitting diodes (LEDs) emitting at 630 nm do not exhibit an efficiency droop. However, upon cooling the AlGaInP LEDs to cryogenic temperatures, they show a pronounced efficiency droop. We attribute the efficiency droop in AlGaInP LEDs to...

  • Growing market for LEDs fuels need for advanced abatement systems. Czerniak, Mike // Solid State Technology;Aug2007, Vol. 50 Issue 8, p28 

    The article focuses on the gas abatement challenges faced by the compound semiconductor (CS) manufacturers in Great Britain. Despite the growing market demand for CS processing required for new light emitting diode (LED) products, CS producers must deal with various environmental issues....

  • Molecular Imprints Releases the Imprio 1100 Precision Imprint Lithography System.  // LED Journal;Sep/Oct2007, Vol. 2 Issue 5, p14 

    The article discusses the use of the Imprio 1100 Precision Imprint Lithography System from Molecular Imprints, Inc. (MII). The system allows devices to work in a variety of applications, including Light Emitting Diodes (LED), high density disk substrated for hard disk drives (HDD), and optical...

  • LED lighting market on high-growth path.  // Electronics For You;Apr2015, Vol. 3 Issue 12, p119 

    The article focuses on the 6Wresearch, which predicts that India's light emitting diode (LED) lighting market will reach 2.2 billion U.S. dollars by 2021.

  • Correction: Influence of Light Emitting Diode-Derived Blue Light Overexposure on Mouse Ocular Surface. Lee, Hyo Seok; Cui, Lian; Li, Ying; Choi, Ji Suk; Choi, Joo-Hee; Li, Zhengri; Kim, Ga Eon; Choi, Won; Yoon, Kyung Chul // PLoS ONE;11/30/2016, Vol. 11 Issue 11, p1 

    No abstract available.

  • Combinatorial fabrication and study of doped-layer-thickness-dependent color evolution in bright small molecular organic light-emitting devices. Cheon, K.O.; Shinar, J. // Applied Physics Letters;9/8/2003, Vol. 83 Issue 10, p2073 

    The behavior of [N,N[sup ′]-diphenyl-N,N[sup ′]-bis(1-naphthylphenyl)-1,1[sup ′]-biphenyl-4,4[sup ′]-diamine (α-NPD)]/[5±0.6 wt % [(2-methyl-6-{2-[2,3,6,7-tetrahydro-1H,5H-benzo(i,j)quinolizin-9-yl] ethenyl}-4H-pyran-4-ylidene)propane-dinitrile (DCM2)-doped...

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics