Identification of aging mechanisms in the optical and electrical characteristics of light-emitting diodes

Pursiainen, Otto; Linder, Norbert; Jaeger, Arndt; Oberschmid, Raimund; Streubel, Klaus
October 2001
Applied Physics Letters;10/29/2001, Vol. 79 Issue 18, p2895
Academic Journal
We report new methods of identifying the effects of aging on the light–current (L–I) and current–voltage (I–V) characteristics of AlInGaP light-emitting diodes (LEDs). We believe that these methods are also applicable to other III–V compound semiconductors. We observe a broadening of the nonlinear range of the L–I characteristic accompanied by a shift to higher currents in the I–V characteristic. These features can be attributed to an increase of nonradiative recombination processes in the active layer. A second process, however, can lead to an increase of the LED output power. We conclude from an analysis of the current dependence that this process is due to a different mechanism. © 2001 American Institute of Physics.


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