Observation of nitrogen vacancy in proton-irradiated Al[sub x]Ga[sub 1-x]N

Zhou, Qiaoying; Manasreh, M. O.; Pophristic, M.; Guo, S.; Ferguson, I. T.
October 2001
Applied Physics Letters;10/29/2001, Vol. 79 Issue 18, p2901
Academic Journal
The optical absorption spectra of nitrogen vacancy (V[sub N]) in proton-irradiated Al[sub x]Ga[sub 1-x]N samples are observed. The spectra obtained for samples with 0.55≤x≤1 exhibit a peak and a shoulder with their energy positions dependent on the Al mole fraction. The peak and shoulder in the optical absorption spectra were interpreted as transitions from the valence band to the V[sub N] energy levels located below the conduction band in samples with x>0.55. The results were used to extrapolate the V[sub N] energy level positions in samples with 0≤x≤0.55. A linear fit of the observed V[sub N] energy level yields E(V[sub N])=4.230+0.680x (eV) for all values of x. Thermal annealing of various samples shows that the total integrated area, which is directly proportional to the defect density, of the absorption band attributed to the nitrogen vacancy is decreased as the annealing temperature is increased. © 2001 American Institute of Physics.


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