TITLE

Defect annealing in Cu(In,Ga)Se[sub 2] heterojunction solar cells after high-energy electron irradiation

AUTHOR(S)
Jasenek, A.; Schock, H. W.; Werner, J. H.; Rau, U.
PUB. DATE
October 2001
SOURCE
Applied Physics Letters;10/29/2001, Vol. 79 Issue 18, p2922
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Cu(In,Ga)Se[sub 2]/CdS/ZnO solar cells need at least 10[sup 18] cm[sup -2] electrons of an energy of 1 MeV to degrade in their power conversion efficiency by more than 25%. Even after such high irradiation doses, annealing of the irradiated solar cells at temperatures between 130 and 160 °C leads to a full recovery of the device performance. Isochronal annealing experiments unveil that the annealing of the irradiation-induced defects has an activation energy of 1.05 eV. © 2001 American Institute of Physics.
ACCESSION #
5402558

 

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